Low power buffer with gain boost

ABSTRACT

The present disclosure provides a detailed description of techniques for implementing a low power buffer with gain boost. More specifically, some embodiments of the present disclosure are directed to a buffer with a stacked transistor configuration, wherein the first transistor receives an input signal and the second transistor receives a complement of the input signal. The first transistor is configured to generate a non-inverting response to the input signal, and the second transistor is configured to generate an inverting response to the complement of the input signal, and to generate a negative g ds  effect, enabling the buffer to exhibit low power and unity gain across a wide bandwidth. In other embodiments, the stacked transistor configuration can be deployed in a full differential implementation. In other embodiments, the buffer can include techniques for improving linearity, DC level shifts, capacitive input loading, and output slewing, settling, and drive capabilities.

RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 14/614,257, filed on Feb. 4, 2015, which is related toco-pending U.S. patent application Ser. No. 14/614,253, entitled “LOWPOWER BUFFER WITH DYNAMIC GAIN CONTROL” (Attorney Docket No.A929R0-008300US), filed on Feb. 4, 2015, which is hereby incorporated byreference in its entirety.

FIELD

This disclosure relates to the field of buffers for high resolution ADCsand more particularly to techniques for implementing a low power bufferwith gain boost.

BACKGROUND

High resolution, high speed analog-to-digital converters (ADCs) canrequire buffers to isolate a high impedance track-and-hold (TAH) stagefrom one or more sample-and-hold (SAH) stages preceding the ADC. In somecases, buffers can be used to isolate successive SAH stages. Such bufferimplementations can be a key component in enabling and advancing highspeed communication (e.g., 100 Gigabit Ethernet) networks and systems.For example, a 28 Gbps serial link communication receiver might requiremultiple successive approximation register (SAR) ADCs, each with one ormore buffers exhibiting at least the following characteristics: widebandwidth, very fast large signal settling and slewing (e.g., low outputimpedance), high linearity over the full analog input signal, low noise,high power supply rejection, and high input impedance over the widebandwidth (e.g., near or in excess of the Nyquist rate). Such receiversmight also demand the buffer exhibit low power consumption, whichintroduces further demands that the buffer gain to be near unity. Forexample, a unity gain buffer might enable the buffer and the ADC to bepowered by a common low supply voltage (e.g., 1V), providing both lowpower consumption by the buffer, and full use of the available ADCdynamic range.

Legacy buffer designs can exhibit some of the aforementionedcharacteristics, but fall short of achieving all of the aforementionedrequired buffer performance characteristics. For example, a legacysource-follower buffer can have high bandwidth, but only moderatelinearity and overall signal settling. The source-follower buffer canalso exhibit asymmetric positive and negative slewing. Other legacybuffer designs might address one or more performance issues (e.g.,asymmetric slewing or linearity), but do not achieve all theaforementioned buffer characteristics required for advancing low power,high speed communication system implementations. Further, the legacybuffer designs exhibit DC level shifts and gains less than unity (e.g.,0.7-0.8), further decreasing linearity and increasing power consumption.For example, to provide a signal to an ADC operating at 1V such that thefull ADC dynamic range is utilized, a legacy buffer design with a gainof 0.7 might require a supply voltage of 1.4V, increasing the powerconsumption as compared to a buffer with unity gain and operating at alower supply voltage.

Techniques are needed to address the problem of implementing a low powerbuffer that exhibits unity gain across a wide bandwidth. None of theaforementioned legacy approaches achieve the capabilities of theherein-disclosed techniques for a low power buffer with gain boost.Therefore, there is a need for improvements.

SUMMARY

The present disclosure provides improved techniques to address theaforementioned issues with legacy approaches. More specifically, thepresent disclosure provides a detailed description of techniques forimplementing a low power buffer with gain boost. The claimed embodimentsaddress the problem of implementing a low power buffer that exhibitsunity gain across a wide bandwidth. More specifically, some claims aredirected to approaches for providing gain boosting using a stackedtransistor configuration to generate a negative drain transconductance(e.g., g_(ds)) effect, which claims advance the technical fields foraddressing the problem of implementing a low power buffer that exhibitsunity gain across a wide bandwidth, as well as advancing peripheraltechnical fields. Some claims improve the functioning of multiplesystems within the disclosed environments.

Some embodiments of the present disclosure are directed to a buffer witha stacked transistor configuration, where the first transistor receivesan input signal and the second transistor receives a complement of theinput signal. The first transistor is configured to generate anon-inverting response to the input signal, and the second transistor isconfigured to generate an inverting response to the complement of theinput signal, and to generate a negative g_(ds) effect, enabling thebuffer to exhibit low power and unity gain across a wide bandwidth. Inother embodiments, the stacked transistor configuration can be deployedin a full differential implementation. In other embodiments, the buffercan include techniques for improving linearity, DC level shifts,capacitive input loading, and output slewing, settling, and drivecapabilities.

Further details of aspects, objectives, and advantages of the disclosureare described below and in the detailed description, drawings, andclaims. Both the foregoing general description of the background and thefollowing detailed description are exemplary and explanatory, and arenot intended to be limiting as to the scope of the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings described below are for illustration purposes only. Thedrawings are not intended to limit the scope of the present disclosure.

FIG. 1 presents a high speed serial link receiver system in anenvironment that includes buffers.

FIG. 2A is a block diagram of a high speed serial link receiver frontend that includes a buffer.

FIG. 2B depicts selected waveforms of a high speed serial link receiverfront end that includes a buffer.

FIG. 3A, FIG. 3B, and FIG. 3C present schematics for comparing bufferimplementations.

FIG. 4A is a schematic of a stacked transistor configuration as used toimplement a low power buffer with gain boost, according to anembodiment.

FIG. 4B is a schematic depicting a small signal representation of astacked transistor configuration as used to implement a low power bufferwith gain boost, according to an embodiment.

FIG. 5A is a schematic of a differential stacked transistorimplementation of a low power buffer with gain boost, according to anembodiment.

FIG. 5B is a schematic of a common mode voltage correction technique asused to implement a low power buffer with gain boost, according to anembodiment.

FIG. 6 is a schematic of a dual stacked transistor configuration as usedto implement a low power buffer with gain boost, according to anembodiment.

FIG. 7 is a schematic of a differential dual stacked transistorimplementation of a low power buffer with gain boost, according to anembodiment.

FIG. 8A and FIG. 8B are block diagrams of low power buffers with gainboost, according to some embodiments.

DETAILED DESCRIPTION

Some embodiments of the present disclosure address the problem ofimplementing a low power buffer that exhibits unity gain across a widebandwidth and some embodiments are directed to approaches for providinggain boosting using a stacked transistor configuration to generate anegative drain transconductance (e.g., g_(ds)) effect. Moreparticularly, disclosed herein and in the accompanying figures areexemplary environments, methods, and systems implementing a low powerbuffer with gain boost.

Overview

High resolution, high speed analog-to-digital converters (ADCs) canrequire buffers to isolate a high impedance track and hold (TAH) stagefrom one or more sample and hold (SAH) stages preceding the ADC. In somecases, buffers can be used to isolate successive SAH stages. Such bufferimplementations can be a key component in enabling and advancing highspeed communication (e.g., 100 Gigabit Ethernet) networks and systems.For example, a 28 Gbps serial link communication receiver might requiremultiple successive approximation register (SAR) ADCs, each with one ormore buffers exhibiting at least the following characteristics: widebandwidth, very fast large signal settling and slewing (e.g., low outputimpedance), high linearity over the full analog input signal, low noise,high power supply rejection, and high input impedance over the widebandwidth (e.g., near or in excess of the Nyquist rate). Such receiversmight also demand the buffer exhibit low power consumption (e.g., 1Vsupply voltage), which introduces further demands that the buffer gainto be near unity. For example,

Some embodiments of the present disclosure address the problem ofimplementing a low power buffer that exhibits unity gain across a widebandwidth to enable advancement of low power, high speed communicationsystems. More specifically, the techniques disclosed herein provide abuffer with gain boosting using a stacked transistor configuration togenerate a negative g_(ds) effect. The negative g_(ds) effect enables anoverall buffer gain that meets or exceeds unity, allowing for a lowerpower consumption. For example, a unity gain buffer providing a signalto an ADC operating at a 1V supply voltage can also operate at a 1Vsupply voltage (e.g., as compared to a higher supply voltages for gainsless than unity), providing both low power consumption by the buffer,and full use of the available ADC dynamic range. The negative g_(ds)effect further provides a lower effective input capacitance thatincreases the overall buffer bandwidth. The stacked transistorconfiguration can be deployed in a full differential implementation, andcan include techniques for improving linearity, DC level shifts,capacitive input loading, and output slewing, settling, and drivecapabilities.

Definitions

Some of the terms used in this description are defined below for easyreference. The presented terms and their respective definitions are notrigidly restricted to these definitions—a term may be further defined bythe term's use within this disclosure.

-   -   The term “exemplary” is used herein to mean serving as an        example, instance, or illustration. Any aspect or design        described herein as “exemplary” is not necessarily to be        construed as preferred or advantageous over other aspects or        designs. Rather, use of the word exemplary is intended to        present concepts in a concrete fashion.    -   As used in this application and the appended claims, the term        “or” is intended to mean an inclusive “or” rather than an        exclusive “or”. That is, unless specified otherwise, or is clear        from the context, “X employs A or B” is intended to mean any of        the natural inclusive permutations. That is, if X employs A, X        employs B, or X employs both A and B, then “X employs A or B” is        satisfied under any of the foregoing instances.    -   The articles “a” and “an” as used in this application and the        appended claims should generally be construed to mean “one or        more” unless specified otherwise or is clear from the context to        be directed to a singular form.    -   The term “logic” means any combination of software or hardware        that is used to implement all or part of the disclosure.    -   The term “non-transitory computer readable medium” refers to any        medium that participates in providing instructions to a logic        processor.    -   A “module” includes any mix of any portions of computer memory        and any extent of circuitry including circuitry embodied as a        processor.

Reference is now made in detail to certain embodiments. The disclosedembodiments are not intended to be limiting of the claims.

DESCRIPTIONS OF EXEMPLARY EMBODIMENTS

FIG. 1 presents a high speed serial link receiver system 100 in anenvironment that includes buffers. As an option, one or more instancesof high speed serial link receiver system 100 or any aspect thereof maybe implemented in the context of the architecture and functionality ofthe embodiments described herein. Also, the high speed serial linkreceiver system 100 or any aspect thereof may be implemented in anydesired environment.

As shown in FIG. 1, the high speed serial link receiver system 100illustrates an environment that includes low power buffers with gainboost that advance the speed and power capabilities of such systems. Forexample, the herein disclosed techniques for low power buffers with gainboost enable, in part, the high speed serial link receiver system 100 tobe implemented in a low power, 8-lane, 28 Gbps serial link transceiver.The high speed serial link receiver system 100 can also berepresentative of similar systems in a variety of environments andapplications, such as optical serial data communication links and memorydata interfaces. Specifically, high speed serial link receiver system100 receives an input signal 102 at a plurality of variable gainamplifiers 104 (e.g., VGA 104 ₁ and VGA 104 ₂) that drive amplifiedinput signals to a plurality of 8-bit SAR ADCs 110 (e.g., 8-bit SAR ADC110 ₁, 8-bit SAR ADC 110 ₂, 8-bit SAR ADC 110 ₃, and 8-bit SAR ADC 110₄). A set of clocks related to in-phase and quadrature-phase timing(e.g., CK₁ 122, CK_(IB) 124, CK_(Q) 126, and CK_(QB) 128) are deliveredto the respective ones of the plurality of 8-bit SAR ADCs 110 by aphase-locked loop (PLL), such as PLL 106, a phase interpolator anddelay-locked loop (DLL), such as phase interpolator and DLL 107, and aclock divider 108. For the aforementioned low power, 8-lane, 28 Gbpsserial link transceiver implementation, the PLL 106 can operate at 14GHz, the phase interpolator and DLL 107 can operate at 7 GHz, and theclock divider 108 can provide divide-by-8 capability (e.g., generate a12.5% duty cycle). As shown, each instance of the plurality of 8-bit SARADCs 110 will generate an 8-bit digital representation of the inputsignal 102 sampled at timing associated with the respective set of inputclocks (e.g., CK₁ 122, CK_(IB) 124, CK_(Q) 126, and CK_(QB) 128).

Further details of an instance of the plurality of 8-bit SAR ADCs 110 isshown in 8-bit SAR ADC 110 ₁. Specifically, the amplified input signalfrom VGA 104 ₁ is received by a plurality of track-and-hold circuits(e.g., see TAHs 112). Each instance of the plurality of TAHs 112 feeds arespective buffer (e.g., buffer 114 ₁ and buffer 114 ₂) that, in turn,feeds a plurality of sample-and-hold circuits (e.g., see SAHs 116). Eachinstance of the plurality of SAHs 116 provides a sampled version of theinput signal 102 (e.g., at timing associated with a respective clockfrom the set of input clocks) to a respective instance of a plurality ofADCs 118. Each instance of the plurality of ADCs 118 compare the sampledversion of the input signal 102 to a respective reference voltage (notshown) to produce a 1-bit digital result that is combined with theresults of the other instances of the plurality of ADCs 118 to producethe full 8-bit digital representation. Further details regarding theoperation and waveforms associated with the plurality of TAHs 112, theplurality of buffers 114, and the plurality of SAHs 116 are described inFIG. 2A and FIG. 2B.

FIG. 2A is a block diagram 2A00 of a high-speed serial link receiverfront end that includes a buffer. As an option, one or more instances ofblock diagram 2A00 or any aspect thereof may be implemented in thecontext of the architecture and functionality of the embodimentsdescribed herein. Also, the block diagram 2A00 or any aspect thereof maybe implemented in any desired environment.

As shown in FIG. 2A, the block diagram comprises a track-and-holdcircuit 112 ₁ (e.g., from the plurality of TAHs 112), the buffer 114 ₁,a sample-and-hold circuit 116 ₁ (e.g., from the plurality of SAHs 116),and an ADC 118 ₁ (e.g., from the plurality of ADCs 118). As shown,buffer 114 ₁ isolates the high impedance track-and-hold andsample-and-hold stages. Further, as illustrated, buffer 114 ₁ can drivemultiple sample-and-hold stages that drive multiple respective ADCs.More specifically, the track-and-hold circuit 112 ₁ receives adifferential input signal across V_(tahP) 202 and V_(tahN) 204 (e.g.,from VGA 104 ₁, see FIG. 1) that the circuit will “track” when clockCK_(tah) 206 is low and “hold” when clock CK_(tah) 206 is high. As anexample, clock CK_(tah) 206 can be included and/or determined from theset of input clocks (e.g., CK₁ 122, CK_(IB) 124, CK_(Q) 126, and CK_(QB)128). The buffer 114 ₁ receives the differential output signal from thetrack-and-hold circuit 112 ₁ across V_(inP) 212 and V_(inN) 214 anddrives a differential output signal across V_(outP) 216 and V_(outN)218.

As earlier mentioned, in low power, high speed implementations, buffer114 ₁ will need to exhibit at least the following characteristics: widebandwidth, very fast large signal settling and slewing (e.g., low outputimpedance), high linearity over the full analog input signal (e.g.,input signal 102), low noise, high power supply rejection, and highinput impedance over the wide bandwidth. In some cases, the bandwidthcan exceed the Nyquist rate (e.g., 17 GHz bandwidth compared to a 14 GHzNyquist rate in a 28 Gsps receiver) in order to improve total harmonicdistortion (THD). The sample-and-hold circuit 116 ₁ receives thedifferential output signal across V_(outP) 216 and V_(outN) 218 (e.g.,from buffer 114 ₁) that the circuit will “sample” when clock CK_(sah)226 is low and “hold” when clock CK_(sah) 226 is high. As an example,clock CK_(sah) 226 can be included and/or determined from the set ofinput clocks (e.g., CK₁ 122, CK_(IB) 124, CK_(Q) 126, and CK_(QB) 128).The sampled differential signal across V_(sahP) 222 and V_(sanN) 224 isprovided to ADC 118 ₁ for conversion to a 1-bit digital signal. FIG. 2Bprovides a visual depiction of example signal waveforms received andgenerated by the components of block diagram 2A00.

FIG. 2B depicts selected waveforms 2B00 of a high-speed serial linkreceiver front end that includes a buffer. As an option, one or moreinstances of selected waveforms 2B00 or any aspect thereof may beimplemented in the context of the architecture and functionality of theembodiments described herein. Also, the selected waveforms 2B00 or anyaspect thereof may be implemented in any desired environment.

As shown in FIG. 2B, selected waveforms 2B00 comprises representationsof various signals (e.g., V_(tahDIFF) 205, clock CK_(tah) 206,V_(inDIFF) 215, V_(outDIFF) 219, clock CK_(sah) 226, and V_(sahDIFF)225) received and generated by the components of block diagram 2A00.More specifically, V_(tahDIFF) 205 represents the differential voltageacross V_(tahP) 202 and V_(tanN) 204, V_(inDIFF) 215 represents thedifferential voltage across V_(inP) 212 and V_(inN) 214, V_(outDIFF) 219represents the differential voltage across V_(outP) 216 and V_(outN)218, and V_(sahDIFF) 225 represents the differential voltage acrossV_(sahP) 222 and V_(sahN) 224. As shown, V_(tahDIFF) 205 can be receivedby the track-and-hold circuit 112 ₁ and tracked when clock CK_(tah) 206(see CK_(tah) waveform 207) is low and held when clock CK_(tah) 206 ishigh to produce V_(inDIFF) 215. V_(inDIFF) 215 can then be received bybuffer 114 ₁ to generate V_(outDIFF) 219. V_(outDIFF) 219 can then bereceived by the sample-and-hold circuit 116 ₁ and sampled when clockCK_(sah) 226 is low (see CK_(sah) waveform 221) and held when clockCK_(sah) 226 is high to produce V_(sanDIFF) 225.

As shown in FIG. 2B, the waveform of the output voltage (e.g.,V_(outDIFF) 219) indicates that buffer 114 ₁ has sufficient bandwidthand gain to produce an output voltage (e.g., V_(outDIFF) 219) thatreplicates the input voltage (e.g., V_(inDIFF) 215) while providingisolation between the track-and-hold and sample-and-hold stages,enabling, in part, a low bit error rate for the high-speed serial linkreceiver (e.g., by maintaining a full scale signal range at the ADCinput such that the maximum ADC resolution is achieved). As speedsincrease and power budgets decrease, designing a buffer exhibiting therequired bandwidth, gain, power, and other characteristics isincreasingly difficult. FIG. 3A, FIG. 3B, and FIG. 3C disclose legacybuffer designs that are limited in one or much such requiredcharacteristics.

FIG. 3A, FIG. 3B, and FIG. 3C present schematic 3A00, schematic 3B00,and schematic 3C00 for comparing buffer implementations. As an option,one or more instances of the schematics or any aspect thereof may beimplemented in the context of the architecture and functionality of theembodiments described herein. Any aspect of the shown schematics may beimplemented in any desired environment.

The buffer implementations shown in FIG. 3A, FIG. 3B, and FIG. 3C, canbe compared as follows:

-   -   Those skilled in the art will recognize the buffer shown in        schematic 3A00 has a source follower configuration. The source        follower configuration can exhibit high bandwidth, but has only        moderate linearity and large input capacitive loading.        Specifically, input device N_(i) 303 can have a large C_(gs)        that provides a charge kickback path to the input voltage V_(in)        302 that can result in slow overall settling at the output        voltage V_(out) 304. The source follower configuration shown in        schematic 3A00 can also exhibit asymmetrical slewing (e.g., it        follows a rising input signal faster than it follows a falling        input signal).    -   The buffer shown in schematic 3B00 also deploys a source        follower configuration, but further adds a feedback path to        improve the symmetry of the positive and negative slewing        current to the output (e.g., V_(out) 314). Specifically, devices        P_(b) 316 and N_(v) 318 are configured and controlled (e.g., by        control voltages V_(pb) 317 and V_(vb) 319, respectively) to        provide equal current into and out of V_(out) 314.    -   The buffer shown in schematic 3C00 enhances the source follower        configuration shown in schematic 3A00 to improve the linearity        degraded by the g_(ds) modulation of device N_(i) 323.        Specifically, device P_(x) 325 V_(ds) of device N_(i) 323 is        near constant, offsetting output impedance effects of device        N_(i) 323 generated during circuit operation.

While the buffer configurations shown in schematic 3A00, schematic 3B00,and schematic 3C00 all exhibit various positive attributes, no suchlegacy buffer designs address the problem of implementing a low powerbuffer that exhibits unity gain across a wide bandwidth to enableadvancement of low power, high speed communication systems.Specifically, in practical high speed implementations, all three bufferconfigurations exhibit both a DC level shift and a signal gain G lessthan unity (e.g., 0.7 to 0.8). The DC level shift and attenuation needsan increased buffer input voltage in order to maintain a full scalesignal range at the ADC input such that the maximum ADC resolution isachieved. The larger buffer input voltage (e.g., 1.25 to 1.43 times therequired buffer output voltage) results in a lower linearity anddistortion performance in the buffers preceding the ADCs. Such lowerlinearity and distortion performance can be improved by increasing thesupply voltage (e.g., V_(DD)) to permit the larger buffer input voltageswings. However, increasing the supply voltage will increase the powerconsumption of the buffer and overall system. Further, if more than onebuffer is in the chain between the input signal (e.g., input signal 102)and the ADCs (e.g., ADCs 118), the resulting signal level at the inputto the signal chain is (1/G)^(n) times the signal level required at theoutput of the signal chain (e.g., at ADCs 118), where n is the number ofbuffers in the chain. The aforementioned linearity, distortion, andpower consumption issues will also increase according to the number n ofbuffers in the chain.

Techniques are therefore needed to address the problem of implementing alow power buffer that exhibits unity gain across a wide bandwidth. Noneof the aforementioned legacy approaches achieve the capabilities of theherein-disclosed techniques for low power buffer with gain boostdescribed in the following figures.

FIG. 4A is a schematic 4A00 of a stacked transistor configuration asused to implement a low power buffer with gain boost. As an option, oneor more instances of schematic 4A00 or any aspect thereof may beimplemented in the context of the architecture and functionality of theembodiments described herein. Also, schematic 4A00 or any aspect thereofmay be implemented in any desired environment.

As shown in FIG. 4A, schematic 4A00 depicts an instance of a stackedtransistor buffer 420 ₁ comprising a device N_(i) 403 coupled to apositive power supply V_(DD) 432 and coupled to (e.g., “stacked” on) adevice N_(X) 406. The stacked transistor buffer 420 ₁ further comprisesa device N_(b) 408 (e.g., to provide a bias current) coupled to deviceN_(X) 406 and a negative power supply V_(SS) 433. Device N_(i) 403 anddevice N_(x) 406 receive input voltage V_(in) 402 and inputvoltage—V_(in) 405, respectively, where input voltage—V_(in) 405 is thecomplement of input voltage V_(in) 402. A second signal that is acomplement of a first signal is of equal magnitude and opposite polarityfrom that of the first signal with respect to a common reference. Forexample, a first voltage signal V₁ at +300 mV above a 500 mV voltagereference (e.g., V₁=800 mV) would have a complementary second voltagesignal V₂ at −300 mV below the 500 mV voltage reference (e.g., V₂=200mV). Such complementary signals (e.g., differential signals) areavailable in many electronic systems (e.g., high speed communicationssystems). An output voltage V_(out) 404 is provided at the node wheredevice N_(i) 403 is coupled to device N_(x) 406.

A “gain boost” is provided by the stacked transistor buffer 420, due, inpart, to the in-phase contribution to the output voltage V_(out) 404 ofthe two transistors in response to the input voltage V_(in) 402 and itscomplement, input voltage—V_(in) 405. Specifically, the device N_(i) 403is configured (e.g., with load devices) to generate a non-invertingresponse to input voltage V_(in) 402, and the device N_(x) 406 isconfigured (e.g., with load devices) to generate an inverting responseto input voltage—V_(in) 405 such that the combined contributions of bothtransistors “boost” the voltage at output voltage V_(out) 404. Morespecifically, as input voltage V_(in) 402 increases, output voltageV_(out) 404 increases, but input voltage—V_(in) 405 decreases, reducingthe current through device N_(b) 408 such that the gain is not reduced.The amount of the gain boost and overall gain of the stacked transistorbuffer 420 ₁ can be determined, in part, by various device attributes(e.g., device size or dimensions). Further details regarding theoperation and gain components of the stacked transistor buffer 420 ₁ aredescribed in FIG. 4B.

FIG. 4B is a schematic 4B00 depicting a small signal representation of astacked transistor configuration as used to implement a low power bufferwith gain boost. As an option, one or more instances of schematic 4B00or any aspect thereof may be implemented in the context of thearchitecture and functionality of the embodiments described herein.Also, schematic 4B00 or any aspect thereof may be implemented in anydesired environment.

As shown in FIG. 4B, the stacked transistor buffer 420 ₁ (e.g., seeschematic 4A00) can be represented by a small signal equivalent circuitas shown in schematic 4B00. Specifically, device N_(i) 403 isrepresented by a current source I_(i) 423 in parallel with atransconductance g_(ds), 413, device N_(x) 406 is represented by acurrent source I_(x) 426 in parallel with a transconductance g_(dsx)416, and device N_(b) 408 is represented by a transconductance g_(dsb)418. The current flowing through current source I_(i) 423 and currentsource I_(x) 426 can be described as follows:

I _(i) =g _(mi)(V _(in) −V _(out))  [EQ. 1]

I _(x) =g _(mx)(−V _(in) −V _(x))  [EQ. 2]

where:

g_(mi) is the transconductance of device N_(i) 403,

g_(mx) is the transconductance of device N_(x) 406, and

V_(x) is the voltage at node V_(x) 407.

The gain G of the stacked transistor buffer 420 ₁ can then berepresented by:

G=V _(out) /V _(in) =[g _(mi) +g _(mx)(1−α)]/[g _(mi) +g _(dsi) +g_(dsx)(1−α)]  [EQ. 3]

where:

α=[g_(mx)+g_(dsx)]/[g_(mx)+g_(dsx)+g_(dsb)].

The second term (e.g., g_(mx) (1−α)) in the numerator of [EQ. 3] is notpresent in the gain equation of a source follower configuration (e.g.,see schematic 3A00) and is the mathematical representation of the gainboost capability of the stacked transistor configuration. Specifically,the stacked transistor configuration is able to meet or exceed unitygain by sizing and/or biasing the devices shown in schematic 4A00. Otherdevice attributes can also contribute to the gain. The offsetting or“negative” transconductance g_(dsx) 416 of device N_(x) 406 that helpsboost the gain also serves to offset device capacitances to create alower effective impedance, thereby increasing the bandwidth of thestacked transistor buffer 420 ₁. A full differential implementation ofthe herein disclosed stacked transistor configuration is shown in FIG.5A below.

FIG. 5A is a schematic 5A00 of a differential stacked transistorimplementation of a low power buffer with gain boost. As an option, oneor more instances of schematic 5A00 or any aspect thereof may beimplemented in the context of the architecture and functionality of theembodiments described herein. Also, schematic 5A00 or any aspect thereofmay be implemented in any desired environment.

As shown in FIG. 5A, schematic 5A00 depicts two instances of the stackedtransistor buffer 420 ₁ shown in schematic 4A00 (e.g., stackedtransistor buffer 420 ₂ and stacked transistor buffer 420 ₃) coupledtogether to receive a differential input signal across an input voltageV_(inP) 502 and an input voltage V_(inN) 512, and produce a differentialoutput signal across an output voltage V_(outP) 504 and an outputvoltage V_(outN) 514. Specifically, the stacked transistor buffer 420 ₂produces the output voltage V_(outP) 504 and comprises a device N_(iP)503 and a device N_(xP) 506 that receive input voltage V_(inP) 502 andinput voltage V_(inN) 512, respectively, where input voltage V_(inN) 512is the complement of input voltage V_(inN) 502. The stacked transistorbuffer 420 ₂ further comprises a device N_(bP) 508 coupled to the deviceN_(xP) 506 and controlled by a bias voltage V_(b) 519 (e.g., to providea bias current). As also shown in schematic 5A00, the stacked transistorbuffer 420 ₃ produces the output voltage V_(outN) 514 and comprises adevice N_(iN) 513 and a device N_(xN) 516 that receive input voltageV_(inN) 512 and input voltage V_(inN) 502, respectively, where inputvoltage V_(inP) 502 is the complement of input voltage V_(inN) 512. Thestacked transistor buffer 420 ₃ further comprises a device N_(bN) 518coupled to the device N_(xN) 516 and controlled by the bias voltageV_(b) 519 (e.g., to provide a bias current).

The common mode voltage at input voltage V_(inP) 502 and input voltageV_(inN) 512 can vary such that linearity and THD are impacted. Forexample, in the high speed serial link receiver system 100 of FIG. 1, aninstance of VGA 104 ₁ can exhibit variations in performance over changesin the manufacturing process, operating voltage, and operatingtemperature such that a range of common mode voltages are presented toinstances of buffer 114 ₁ and buffer 114 ₂. One technique for correctingfor common mode voltage variations is presented in FIG. 5B.

FIG. 5B is a schematic 5B00 of a common mode voltage correctiontechnique as used to implement a low power buffer with gain boost,according to an embodiment. As an option, one or more instances ofschematic 5B00 or any aspect thereof may be implemented in the contextof the architecture and functionality of the embodiments describedherein. Also, the schematic 5B00 or any aspect thereof may beimplemented in any desired environment.

Schematic 5B00 depicts the differential stacked transistorimplementation of FIG. 5A with modifications. Specifically, a high-passfilter 530 ₁ is inserted in the path connecting input voltage V_(inN)512 to device N_(xP) 506, and a high-pass filter 530 ₂ is inserted inthe path connecting input voltage V_(inP) 502 to device N_(xN) 516.Also, the DC bias voltage for device N_(xP) 506 is provided by a biasvoltage V_(dcN) 532, and the DC bias voltage for device N_(xN) 516 isprovided by a bias voltage V_(dcN) 532. In the configuration shown inschematic 5B00, the common mode voltage components (e.g., up to 10 MHz)of the input signal are blocked from device N_(xN) 516 and device N_(xP)506, and the DC operating point is instead controlled by bias voltageV_(dcN) 532 and bias voltage V_(dcP) 531, respectively, such thatimprovements in linearity and THD are achieved.

The differential low power buffers with gain boost shown in schematic5A00 and schematic 5B00 can provide unity gain by appropriately sizingdevice N_(xP) 506, device N_(xN) 516, device N_(bP) 508, and deviceN_(bN) 518 for a given bias current (e.g., controlled by bias voltageV_(b) 519). While the negative g_(ds) effects (e.g., of device N_(xP)506 and device N_(xN) 516) in the design shown in schematic 5A00 andschematic 5B00 allow for unity gain across a wide bandwidth (e.g., 50GHz in 28 nm CMOS), improvements to DC level shifts, capacitive inputloading, linearity (e.g., due to g_(ds) modulation), and output slewing,settling, and drive capability are possible. Such improvements aredescribed in the implementations shown in FIG. 6 and FIG. 7.

FIG. 6 is a schematic 600 of a dual stacked transistor configuration asused to implement a low power buffer with gain boost. As an option, oneor more instances of schematic 600 or any aspect thereof may beimplemented in the context of the architecture and functionality of theembodiments described herein. Also, the schematic 600 or any aspectthereof may be implemented in any desired environment.

As shown in FIG. 6, schematic 600 depicts an instance of a dual stackedtransistor buffer 640, that includes an instance of the stackedtransistor buffer 420 ₄ (e.g., see schematic 4A00) comprising a deviceN_(i) 603, a device N_(x) 606, and a device N_(b) 608 controlled by abias voltage V_(b) 609. To achieve the aforementioned performanceimprovements, a second stacked transistor configuration is addedcomprising a device P, 613, a device N. 616, and a device N_(b2) 618controlled by the bias voltage V_(b) 609. Device N, 603 and device N_(x)606 receive an input voltage V_(i) 602 and an input voltage—V_(in) 605,respectively, where input voltage—V_(in) 605 is the complement of inputvoltage V_(in) 602. An output voltage V_(out) 604 is provided at thedrain of device N_(i) 603 (e.g., as compared to the output voltageV_(out) 404 at the source of device N_(i) 403 in schematic 4A00). Theaddition of the device P_(i) 613 provides several benefits.Specifically, device P_(i) 613 compensates for g_(ds) modulation effectsof device N_(i) 603, thereby improving linearity and THD. Further,device N_(i) 603 (e.g., N-type MOSFET device) and device P_(i) 613(e.g., P-type MOSFET device) are coupled (e.g., as an N-type sourcefollower in series with a P-type source follower) such that the commonmode voltage is maintained between input voltage V_(in) 602 and outputvoltage V_(out) 604 (e.g., there is no DC level shift). This dual sourcefollower configuration further lowers the input capacitive loading(e.g., 80% reduction). Also, the shown coupling of device N_(m) 616 tothe input voltage V_(in) 602 and device P_(i) 613 serves to compensatefor g_(ds) modulation effects of device P_(in) 613, further improvinglinearity and THD.

As shown, a current I_(i) 623 through device P_(i) 613 can also be usedwith a class AB output stage to control and improve slewing, settling,and output load drive capability. Specifically, a device P_(sp) 611 anddevice N_(i) 603 comprise the class AB output stage, such that deviceN_(i) 603 sinks current from output voltage V_(out) 604 when inputvoltage V_(in) 602 goes high, and device P_(sp) 611 sources current tooutput voltage V_(out) 604 when input voltage V_(in) 602 goes low. Acurrent I_(sp) 621 from device P_(sp) 611 is derived from the currentthrough device N_(m) 616 (e.g., see current I_(m) 626 ₁ and currentI_(m) 626 ₂) using a current mirror configuration comprising deviceP_(sp) 611, a device P_(spd) 612, and a device P_(r) 614. The currentI_(m) 626 ₁ is further related to current I_(i) 623 and a current I_(b2)629, which in turn is related to a current I_(b1) 628 ₁ (e.g., andcurrent I_(b1) 628 ₂) through a common connection of the bias voltageV_(b) 609 to device N_(b1) 608 and device N_(b2) 618. By sizing deviceN_(b1) 608 relative to device N_(b2) 618 (e.g., 1:M, 1:5, etc.), andsizing device P_(spd) 612 relative to device P_(sp) 611 (e.g., 1:N, 4:6,etc.), the relationships among the aforementioned currents shown inschematic 600 are as follows:

I_(b2)=MI_(b1)  [EQ. 4]

I_(sp)=NI_(m)  [EQ. 5]

I _(i) =NI _(m) −I _(b1)  [EQ. 6]

I _(m)=[(M+1)/(N±1)]I _(b1)  [EQ. 7]

FIG. 7 is a schematic 700 of a differential dual stacked transistorimplementation of a low power buffer with gain boost. As an option, oneor more instances of schematic 700 or any aspect thereof may beimplemented in the context of the architecture and functionality of theembodiments described herein. Also, the schematic 700 or any aspectthereof may be implemented in any desired environment.

As shown in FIG. 7, schematic 700 depicts two instances of the dualstacked transistor buffer 640 ₁ shown in schematic 600 (e.g., dualstacked transistor buffer 640 ₂ and dual stacked transistor buffer 640₃) coupled together to receive a differential input signal across aninput voltage V_(inP) 702 and an input voltage V_(inN) 712, and producea differential output signal across an output voltage V_(outP) 704 andan output voltage V_(outN) 714. Specifically, the dual stackedtransistor buffer 640 ₂ produces the output voltage V_(outP) 704 andcomprises a device N_(iP) 703 and a device N_(xP) 706 that receive inputvoltage V_(inP) 702 and input voltage V_(inN) 712, respectively, whereinput voltage V_(inN) 712 is the complement of input voltage V_(inP)702. The dual stacked transistor buffer 640 ₂ further comprises a deviceN_(b1P) 708 and a device N_(b2P) 709 (e.g., to provide a set of biascurrents) controlled by a bias voltage V_(b) 720. As also shown inschematic 5A00, the dual stacked transistor buffer 640 ₃ produces theoutput voltage V_(outN) 714 and comprises a device N_(iN) 713 and adevice N_(xN) 716 that receive input voltage V_(inN) 712 and inputvoltage V_(inP) 702, respectively, where input voltage V_(inP) 702 isthe complement of input voltage V_(inN) 712. The dual stacked transistorbuffer 640 ₃ further comprises a device N_(b1N) 718 and a device N_(b2N)719 (e.g., to provide a set of bias currents) controlled by the biasvoltage V_(b) 720. A description of the remaining components comprisingthe dual stacked transistor buffer 640 ₂ and the dual stacked transistorbuffer 640 ₃ is disclosed in FIG. 6.

ADDITIONAL EMBODIMENTS OF THE DISCLOSURE

FIG. 8A and FIG. 8B are block diagram 8A00 and block diagram 8B00,respectively, of low power buffers with gain boost, according to someembodiments. As an option, one or more instances of block diagram 8A00and block diagram 8B00 or any aspect thereof may be implemented in thecontext of the architecture and functionality of the embodimentsdescribed herein. Also, block diagram 8A00 and block diagram 8B00 or anyaspect thereof may be implemented in any desired environment.

Shown in block diagram 8A00 is a buffer circuit comprising: a firstinput node to receive a first input signal; a second input node toreceive a second input signal; a first connection node; a secondconnection node; a first supply node; a second supply node; a firsttransistor coupled to the first input node, the first supply node, andthe first connection node; a second transistor coupled to the secondinput node and the first connection node; a third transistor coupled tothe second input node, the second supply node, and the second connectionnode; a fourth transistor coupled to the first input node and the secondconnection node; a first bias circuit coupled to the second transistor;and a second bias circuit coupled to the fourth transistor; wherein thesecond input signal is a complement of the first input signal.

More specifically, the second input signal is of equal magnitude andopposite polarity from that of the first input signal with respect to acommon reference. For example, a first voltage signal V₁ at +300 mVabove a 500 mV voltage reference (e.g., V₁=800 mV) would have acomplementary second voltage signal V₂ at −300 mV below the 500 mVvoltage reference (e.g., V₂=200 mV). Such complementary signals (e.g.,differential signals) are available in many electronic systems (e.g.,high speed communications systems). Further details regarding blockdiagram 8A00 and 8B00 are described in the herein disclosed embodiments.

It should be noted that there are alternative ways of implementing theembodiments disclosed herein. Accordingly, the embodiments and examplespresented herein are to be considered as illustrative and notrestrictive, and the claims are not to be limited to the details givenherein, but may be modified within the scope and equivalents thereof.

In the foregoing specification, the disclosure has been described withreference to specific embodiments thereof. It will, however, be evidentthat various modifications and changes may be made thereto withoutdeparting from the broader spirit and scope of the disclosure. Forexample, the above-described process flows are described with referenceto a particular ordering of process actions. However, the ordering ofmany of the described process actions may be changed without affectingthe scope or operation of the disclosure. The specification and drawingsare, accordingly, to be regarded in an illustrative sense rather than ina restrictive sense.

What is claimed is:
 1. A communication system comprising: a clock sourcefor providing a clock signal; an ADC module comprising a buffer circuit,wherein the buffer circuit comprises: a first connection node, a firstsupply node; a first transistor coupled to the a first supply node andthe first connection node, the first transistor being configured toprocess a first input signal; a second transistor coupled to the firstconnection node, the second transistor being configured to process asecond input signal, second input signal being a complement of the firstinput signal; and a first bias circuit coupled to the second transistor,wherein the first transistor, the second transistor and the first biascircuit have a respective plurality of design attributes, and wherein atleast one of the respective plurality of design attributes isestablished to achieve a gain equal to a first target gain of one, thegain being defined by an output amplitude of a first output signal atthe first connection node divided by an input amplitude of the firstinput signal.
 2. The system of claim 1, wherein at least one of thefirst transistor, the second transistor and the first bias circuitcomprise an N-type MOSFET device.
 3. The system of claim 1, wherein thefirst bias circuit is controlled by a bias signal.
 4. The system ofclaim 1 wherein the clock source comprises a PLL module.
 5. The systemof claim 1 wherein the clock source comprises a clock divider module. 6.The system of claim 1 further comprising one or more variable gainamplifier for processing the first input signal and the second inputsignal.
 7. The system of claim 1 wherein the ADC module furthercomprises a plurality of shift and hold registers.
 8. The system ofclaim 1 further comprising a phase interpolator module.
 9. The system ofclaim 1 wherein the ADC module further comprises a plurality of trackand hold registers.
 10. An analog-digital-converter device comprising: atrack-and-hold circuit; a sample-and-hold circuit; a buffer circuitprovided between the track-and-hold circuit and the sample-and-holdcircuit, the buffer circuit comprising: a first connection node; a firstsupply node; a first transistor coupled to the a first supply node andthe first connection node, the first transistor being configured toprocess a first input signal; a second transistor coupled to the firstconnection node, the second transistor being configured to process asecond input signal, second input signal being a complement of the firstinput signal; and a first bias circuit coupled to the second transistor,wherein the first transistor, the second transistor and the first biascircuit have a respective plurality of design attributes, and wherein atleast one of the respective plurality of design attributes isestablished to achieve a gain equal to a first target gain of one, thegain being defined by an output amplitude of a first output signal atthe first connection node divided by an input amplitude of the firstinput signal.
 11. The device of claim 10 wherein the buffer circuitfurther comprises a first high-pass configured to filter the secondinput signal to the second transistor.
 12. The device of claim 10,wherein the first transistor and/or the second transistor comprises anN-type MOSFET device.
 13. The device of claim 10, wherein the buffercircuit further comprises: a second connection node; a second supplynode; a third transistor coupled to the second supply node and thesecond connection node; a fourth transistor coupled to the secondconnection node; and a second bias circuit coupled to the fourthtransistor.
 14. The device of claim 13, wherein the third transistor,the fourth transistor and the second bias circuit have a respectiveplurality of design attributes, and wherein at least one of therespective plurality of design attributes is established to achieve adifferential gain equal to a target differential gain, wherein thedifferential gain is defined by a differential output amplitude of adifferential output signal divided by a differential input amplitude ofa differential input signal, wherein the differential output signal isthe difference between the first output signal at the first connectionnode and a second output signal at the second connection node, and thedifferential input signal is the difference between the first inputsignal and the second input signal.
 15. The device of claim 14, whereinthe target differential gain is one.
 16. A buffer circuit devicecomprising: a first connection node; a first supply node; a firsttransistor coupled to the a first supply node and the first connectionnode, the first transistor being configured to process a first inputsignal, the first transistor comprises a MOSFET device; a secondtransistor coupled to the first connection node, the second transistorbeing configured to process a second input signal, second input signalbeing a complement of the first input signal; and a first bias circuitcoupled to the second transistor, wherein the first transistor, thesecond transistor and the first bias circuit have a respective pluralityof design attributes, and wherein at least one of the respectiveplurality of design attributes is established to achieve a gain equal toa first target gain of one, the gain being defined by an outputamplitude of a first output signal at the first connection node dividedby an input amplitude of the first input signal.
 17. The device of claim16 further comprising a first input node for receiving the first inputsignal and a second input node for receiving the second input signal.18. The device of claim 17 further comprising: a third connection node;a first current feedback node; a fifth transistor coupled to the firstconnection node, the first supply node, and the third connection node; asixth transistor coupled to the first input node, the first currentfeedback node, and the third connection node; a first current mirrorcoupled to the first current feedback node and the first supply node;and a third bias circuit coupled to the sixth transistor, wherein thesecond input signal is a complement of the first input signal.
 19. Thedevice of claim 18, wherein at least one of the first transistor, thesecond transistor, the sixth transistor, the first bias circuit, and thethird bias circuit comprise an N-type MOSFET device, and wherein thefifth transistor comprises a P-type MOSFET device.
 20. The device ofclaim 19, wherein the fifth transistor, the sixth transistor and thethird bias circuit have a respective plurality of design attributes, andwherein at least one of the respective plurality of design attributes isestablished to achieve a gain equal to a target gain of one, wherein thegain is defined by an output amplitude of a first output signal at thefirst supply node divided by an input amplitude of the first inputsignal.